STP3NK60Z

STB3NK60ZT4, STD3NK60Z-1, STD3NK60ZT4 STP3NK60Z, STP3NK60ZFP Datasheet N-channel 600 V, 3.2 Ω typ., 2.4 A SuperMESH™ Power MOSFETs in D²PAK, IPAK, DPAK, TO-220 and TO-220FP packages TAB 13 D2PAK TAB TAB TAB 23 1 DPAK IPAK 3 12 1 23 TO-220 123 TO-220FP D(2, TAB) G(1) Features Order codes VDS RDS(on) max. STB3NK60ZT4 STD3NK60Z-1 STD3NK60ZT4 600 V 3.6 Ω STP3NK60Z STP3NK60ZFP Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitance Zener-protected ID 2.4 A Package D2PAK IPAK DPAK TO-220 TO-220FP Applications S(3) AM01475V1 Switching applications Product status link STB3NK60ZT4 STD3NK60Z-1 STD3NK60ZT4 STP3NK60Z STP3NK60ZFP Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. DS2912 - Rev 6 - August 2018 For further information contact your local STMicroelectronics sales office. www.st.com STB3NK60ZT4,STD3NK60Z-1,STD3NK60ZT4,STP3NK60Z,STP3NK60ZFP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter D2PAK, TO-220 VDS Drain-source voltage VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C 2.4 ID Drain current (continuous) at ...