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STB3NB60

ST Microelectronics

N-CHANNEL Power MOSFET


Description
® STB3NB60 N - CHANNEL 600V - 3.3Ω - 3.3A - D2PAK/I2PAK PowerMESH™ MOSFET TYPE STB3NB60 s s s s s V DSS 600 V R DS(on) <3.6 Ω ID 3.3 A TYPICAL RDS(on) = 3.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 1 D2PAK TO-263 (Suffix ”T4”) DESCRIPTION Using the latest high voltage MESH OVERLAY...



ST Microelectronics

STB3NB60

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