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STB18N20
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PRELIMINARY DATA TYPE ST B18N20 V DSS 20...
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STB18N20
N - CHANNEL ENHANCEMENT MODE POWER MOS
TRANSISTOR
PRELIMINARY DATA TYPE ST B18N20 V DSS 200 V R DS(on) < 0.18 Ω ID 18 A
s s s s s s s
s
s
TYPICAL RDS(on) = 0.145 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE VERY HIGH CURRENT CAPABILITY APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING D2PACK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX ”T4”)
3 12
3 1
I2PAK TO-262
D2PAK TO-263
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s
REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS VDGR V GS ID ID I DM ( ) P t ot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor St orage Temperature Max. Operating Junction Temperature
o o o
Value 200 200 ± 20 18 11 72 125 1 -65 to 150 150
Uni t V V V A A A W W/ o C
o o
C C
() Pulse width limited by safe operating area
March 1996
1/10
STB18N20
THERMAL DATA
R t hj-ca se R t hj- amb R t hj- amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambien...