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NE687M03 Dataheets PDF



Part Number NE687M03
Manufacturers CEL
Logo CEL
Description NPN SILICON TRANSISTOR
Datasheet NE687M03 DatasheetNE687M03 Datasheet (PDF)

www.DataSheet4U.com NEC's NE687M03 NPN SILICON TRANSISTOR FEATURES • NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 14 GHz LOW NOISE FIGURE: NF = 1.4 dB at 2 GHz OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M03 1.2±0.05 0.8±0.1 • • 2 1.4 ±0.1 0.45 (0.9) 0.45 3 +0.1 0.3 -0 DESCRIPTION NEC's NE687M03 transistor is designed for low noise, high gain, and low.

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www.DataSheet4U.com NEC's NE687M03 NPN SILICON TRANSISTOR FEATURES • NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 14 GHz LOW NOISE FIGURE: NF = 1.4 dB at 2 GHz OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M03 1.2±0.05 0.8±0.1 • • 2 1.4 ±0.1 0.45 (0.9) 0.45 3 +0.1 0.3 -0 DESCRIPTION NEC's NE687M03 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited for very low voltage/low current designs for portable wireless communications and cellular radio applications. NEC's new low profile/flat lead style "M03" package is ideal for today's portable wireless applications. The NE687 is also available in six different low cost plastic surface mount package styles. 1 +0.1 0.2 -0 0.59±0.05 +0.1 0.15 -0.05 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NF |S21E|2 hFE2 ICBO IEBO CRE3 PARAMETERS AND CONDITIONS Gain Bandwidth at VCE = 2 V, IC = 20 mA, f = 2 GHz VCE = 1 V, IC = 10 mA, f = 2 GHz Noise Figure at VCE = 2 V, IC = 3 mA, f = 2 GHz VCE = 1 V, IC = 3 mA, f = 2 GHz Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz VCE = 1 V, IC = 10 mA, f = 2 GHz Forward Current Gain at VCE = 2 V, IC = 20 mA Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Feedback Capacitance at VCB = 2 V, IE = 0, f = 1 MHz μA μA pF 0.4 UNITS GHz GHz dB dB dB dB 8.5 6 70 MIN 9 7 NE687M03 2SC5436 M03 TYP 14 12 1.3 1.3 10 9.0 130 0.1 0.1 0.8 2 2 MAX Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. California Eastern Laboratories NE687M03 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW °C °C RATINGS 5 3 2 30 90 150 -65 to +150 ORDERING INFORMATION PART NUMBER NE687M03-A NE687M03-T1-A QUANTITY Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25°C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE D.C. CURRENT GAIN vs. COLECTOR CURRENT 25 500 Collector Current, IC (mA) 20 15 180 µA 160 µA 140 µA 120 µA 100 µA 80 µA 60 µA 40 µA IB = 20 µA DC Current Gain, hFE 200 µA 200 100 VCE = 1 V VCE = 2 V 10 50 5 20 0 0 2.2 2.4 2.6 10 1 2 5 10 20 50 100 Collector to Emmiter Voltage, VCE (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 2V Collector Current, IC (mA) 50 Collector Current, IC (mA) 40 30 20 10 0 0.5 1.0 Base to Emmiter Voltage, VBE (V) NE687M03 NE687M03 NONLINEAR MODEL SCHEMATIC CCBPKG CCB Q1 LCX LBX Base LB CCE Collector LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS(1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 302.3e-18 104 1.038 10 0.370 1e-6 31.19 17.54 1.023 30 8.369e-3 81.93e-12 4.986 0.80 11.10 2.46 17e-3 4.477 0.415e-12 0.68 0.53 0.102e-12 0.8 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1 0.53 0.27 0 0.75 0 0.37 5e-12 8 0.06 1.0 69.1 1.e-9 1.11 0 3 0 1 UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps ADDITIONAL PARAMETERS Parameters CCB CCE LB LE CCBPKG CCEPKG LBX LCX LEX 687M03 0.26e-12 0.19e-12 0.4e-9 0.7e-9 0.08e-12 0.08e-12 0.12e-9 0.10e-9 0.12e-9 MODEL TEST CONDITIONS Frequency: 0.1 to 5.0 GHz Bias: VCE = 0.5 V to 2.5 V, IC = 0.5 mA to 30 mA Date: 11/98 hFE = 108 at 2 V, 20 mA (1) Gummel-Poon Model Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 04/26/2004 A Business Partner of NEC Compound Semiconductor Devices, Ltd. 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The.


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