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RMPA2458

Fairchild Semiconductor

InGaP HBT Low Current Linear Power Amplifier

www.DataSheet4U.com RMPA2458 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier Preliminary September 2005 RMPA...


Fairchild Semiconductor

RMPA2458

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Description
www.DataSheet4U.com RMPA2458 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier Preliminary September 2005 RMPA2458 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier Features ■ ■ ■ ■ ■ ■ ■ ■ ■ 31.5dB small signal gain 27dBm output power @ 1dB compression 103mA total current at 19dBm modulated power out 2.5% EVM at 19 dBm modulated power out 3.3V collector supply operation 2.9V mirror supply operation Power saving shutdown options (bias control) Integrated power detector with 20dB dynamic range Lead-free RoHS compliant 3 x 3 x 0.9mm leadless package General Description The RMPA2458 power amplifier is designed for high performance WLAN applications in the 2.4–2.5 GHz frequency band. The low profile 16 pin 3 x 3 x 0.9 mm package with internal matching on both input and output to 50 Ohms minimizes next level PCB space and allows for simplified integration. The onchip detector provides power sensing capability while the bias control provides power saving shutdown capability. The PA’s industry leading low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) technology. ■ Internally matched to 50 Ohms and DC blocked RF input/ output ■ Optimized for use in 802.11b/g applications Device Electrical Characteristics1 802.11g OFDM Modulation (176 µs burst time, 100 µs idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth Parameter Frequency Collector Supply Voltage Mirror Supply Voltage Mirror Supply Current Gain Tota...




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