High Power NPN Epitaxial Planar Bipolar Transistor
Description
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2STW4468
High power NPN epitaxial planar bipolar transistor
General features
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High breakdown voltage VCEO=140V Complementary to 2STW1695 Fast-switching speed Typical ft =20MHz Fully characterized at 125 oC In compliance with the 2002/93/EC European Directive TO-247
3 2 1
Applications
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Audio power amplifier
Description
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