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SST11LP12 Dataheets PDF



Part Number SST11LP12
Manufacturers SST
Logo SST
Description High-Linearity Power Amplifier
Datasheet SST11LP12 DatasheetSST11LP12 Datasheet (PDF)

www.DataSheet4U.com 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12 SST1LP124.9-5.8 GHz High-Linearity Power Amplifier Preliminary Specifications FEATURES: • High Gain: – Typically 35 dB gain across 4.9-5.8 GHz over temperature 0°C to +85°C High linear output power: – ~28 dBm P1dB (Pulsed single-tone signal) – Meet 802.11a OFDM ACPR requirement up to 23+ dBm over ~ entire band – Added EVM~4% up to 21 dBm for 54 Mbps 802.11a signal High power-added efficiency/Low operating current for 54 .

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www.DataSheet4U.com 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12 SST1LP124.9-5.8 GHz High-Linearity Power Amplifier Preliminary Specifications FEATURES: • High Gain: – Typically 35 dB gain across 4.9-5.8 GHz over temperature 0°C to +85°C High linear output power: – ~28 dBm P1dB (Pulsed single-tone signal) – Meet 802.11a OFDM ACPR requirement up to 23+ dBm over ~ entire band – Added EVM~4% up to 21 dBm for 54 Mbps 802.11a signal High power-added efficiency/Low operating current for 54 Mbps 802.11a applications – ~12% @ POUT = 21 dBm for 54 Mbps Built-in Ultra-low IREF power-up/down control – IREF <3 mA Low idle current – ~130 mA ICQ High speed power up/down – Turn on/off time (10%~90%) <100 ns – Typical power-up/down delay with driver delay included <200 ns • High temperature stability – ~1.5/1.0 dB gain/power variation between 0°C to +85°C – ~1 dB detector variation over 0°C to +85°C • Low shut-down current (< 0.1 µA) • On-chip power detection • 20 dB dynamic range on-chip power detection • Simple input/output matching • Packages available – 16-contact WQFN (3mm x 3mm) – Non-Pb (lead-free) packages available • • • • • APPLICATIONS: • • • • WLAN (IEEE 802.11a) Japan WLAN HyperLAN2 Multimedia PRODUCT DESCRIPTION The SST11LP12 is a high-power, high-gain power amplifier based on the highly-reliable InGaP/GaAs HBT technology. The SST11LP12 can be easily configured for high-power, high-efficiency applications with superb power-added efficiency while operating over the entire 802.11a frequency band for U.S., European, and Japanese markets (4.9-5.8 GHz). It typically provides 35 dB gain with 16% poweradded efficiency @ POUT = 23 dBm. The SST11LP12 has excellent linearity, typically ~4% added EVM at 21 dBm output power which is essential for 54 Mbps 802.11a operation while meeting 802.11a spectrum mask at 23+ dBm. SST11LP12 also has wide-range (>20 dB), temperature-stable (~1 dB over 85°C), singleended/differential power detectors which lower users’ cost on power control. The power amplifier IC also features easy board-level usage along with high-speed power-up/down control. Ultralow reference current (total IREF <3 mA) makes the SST11LP12 controllable by an on/off switching signal directly from the baseband chip. These features coupled with low operating current make the SST11LP12 ideal for the final stage power amplification in battery-powered 802.11a WLAN transmitter and access point applications. The SST11LP12 is offered in 16-contact WQFN package. See Figure 1 for pin assignments and Table 1 for pin descriptions. ©2006 SST Communications Corp. S71278-01-000 1/06 1 The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice. 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12 Preliminary Specifications FUNCTIONAL BLOCKS FUNCTIONAL BLOCK DIAGRAM VCC1 VCC2 VCC3 14 NC 13 12 NC 11 RFOUT 10 RFOUT Bias Circuit 5 NC 6 VREF 7 VREF 8 Det_ref 1278 B1.1 16 NC RFIN RFIN VCCb 1 2 3 4 15 9 Det ©2006 SST Communications Corp. S71278-01-000 1/06 2 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12 Preliminary Specifications PIN ASSIGNMENTS VCC1 VCC2 VCC3 14 16 NC RFIN RFIN VCCb 1 15 13 12 NC Top View 2 3 4 RF and DC GND 0 5 NC 6 VREF 7 VREF 8 Det_ref 1278 16-wqfn P1.0 NC 11 RFOUT 10 RFOUT 9 Det (contacts facing down) FIGURE 1: PIN ASSIGNMENTS FOR 16-CONTACT WQFN PIN DESCRIPTIONS TABLE 1: PIN DESCRIPTION Symbol GND NC RFIN RFIN VCCb NC VREF VREF Det_ref Det RFOUT RFOUT NC NC VCC3 VCC2 VCC1 1. I=Input, O=Output Pin No. 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Pin Name Ground No Connection Type1 Function The center pad should be connected to RF ground with several low inductance, low resistance vias. Unconnected pin I I Power Supply No Connection PWR PWR O O O O No Connection No Connection Power Supply Power Supply Power Supply PWR PWR PWR PWR RF input, DC decoupled RF input, DC decoupled Supply voltage for bias circuit Unconnected pin Current Control Current Control On-chip power detector reference On-chip power detector RF output RF output Unconnected pin Unconnected pin Power supply, 3rd stage Power supply, 2nd stage Power supply, 1st stage T1.1 1278 ©2006 SST Communications Corp. S71278-01-000 1/06 3 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12 Preliminary Specifications ELECTRICAL SPECIFICATIONS The AC and DC specifications for the power amplifier interface signals. Refer to Table 2 for the DC voltage and current specifications. Refer to Figures 2 through 10 for the RF performance. Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditi.


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