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MRF6S21100HSR3 Dataheets PDF



Part Number MRF6S21100HSR3
Manufacturers Freescale Semiconductor
Logo Freescale Semiconductor
Description RF Power Field Effect Transistors
Datasheet MRF6S21100HSR3 DatasheetMRF6S21100HSR3 Datasheet (PDF)

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev. 7, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be us ed in Clas s AB for PCN - PCS/c ellular radio, WLL and TD - SCDMA applications. • Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 9.

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev. 7, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be us ed in Clas s AB for PCN - PCS/c ellular radio, WLL and TD - SCDMA applications. • Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 950 mA, Pout = 23 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 15.9 dB Drain Efficiency — 27.6% IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 39.5 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF6S21100HR3 MRF6S21100HSR3 2110 - 2170 MHz, 23 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF6S21100HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF6S21100HSR3 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS Tstg Tc TJ Value - 0.5, +68 - 0.5, +12 - 65 to +150 150 200 Unit Vdc Vdc °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 100 W CW Case Temperature 77°C, 23 W CW Symbol RθJC Value (1,2) 0.45 0.52 Unit °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007. All rights reserved. MRF6S21100HR3 MRF6S21100HSR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 3A (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 250 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 950 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.2 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.5 — pF VGS(th) VGS(Q) VDS(on) 1 2 0.1 2 2.8 0.21 3 4 0.3 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 23 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. Gps ηD IM3 ACPR IRL 14.5 26 — — — 15.9 27.6 - 37 - 39.5 - 16 17.5 — - 35 - 38 -9 dB % dBc dBc dB MRF6S21100HR3 MRF6S21100HSR3 2 RF Device Data Freescale Semiconductor B1 VBIAS R1 R2 + C1 + C2 C4 C3 C5 Z8 Z5 RF INPUT Z1 C6 DUT Z2 Z3 Z4 Z6 Z7 Z9 Z10 Z11 C7 Z12 RF OUTPUT C8 + C9 + C10 + C11 C13 + C12 VSUPPLY + C14 Z1, Z12 Z2 Z3 Z4 Z5 Z6 1.250″ 1.070″ 0.330″ 0.093″ 1.255″ 0.160″ x 0.084″ x 0.084″ x 0.800″ x 0.800″ x 0.040″ x 0.880″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z7 Z8 Z9 Z10 Z11 PCB 0.320″ x 0.880″ Microstrip 0.120″ x 0.820″ Microstrip 0.035″ x 0.320″ Microstrip 0.335″ x 0.200″ Microstrip 0.650″ x 0.084″ Microstrip Arlon GX - 0300 - 55 - 22, 0.030″, εr = 2.55 Figure 1. MRF6S21100HR3(SR3) Test Circuit Schematic Table 5. MRF6S21100HR3(SR3) Test Circuit Component Designations and Values Part B1 C1 C2 C3 C4, C13 C5 C6, C7 C8 C9, C10, C11, C12 C14 R1 R2 Ferrite Bead 1.0 μF, 50 V Tantalum Capacitor 10 μF, 50 V Electrolytic Capacitor 1000 pF 100B Chip Capacitor 0.1 μF 100B Chip Capacitors 5.1 pF Chip Capacitor 15 pF Chip Capacitors 6.8 pF Chip Capacitors 22 μF, 35 V Tantalum Capaci.


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