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MAS1175 Dataheets PDF



Part Number MAS1175
Manufacturers Micro Analog systems
Logo Micro Analog systems
Description IC FOR 10.00 - 20.00 MHz VCTCXO
Datasheet MAS1175 DatasheetMAS1175 Datasheet (PDF)

www.DataSheet4U.com DA1175.008 13 July, 2006 MAS1175 IC FOR 10.00 – 20.00 MHz VCTCXO Low Power Wide Supply Voltage Range True Sine Wave Output Very High Level of Integration • Electrically Trimmable • Very Low Phase Noise • Low Cost • • • • DESCRIPTION The MAS1175 is an integrated circuit well suited to build VCTCXO for mobile communication. Only two external components are needed. Temperature calibration is achieved with three calibration points only. The trimming is done through a serial bus.

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www.DataSheet4U.com DA1175.008 13 July, 2006 MAS1175 IC FOR 10.00 – 20.00 MHz VCTCXO Low Power Wide Supply Voltage Range True Sine Wave Output Very High Level of Integration • Electrically Trimmable • Very Low Phase Noise • Low Cost • • • • DESCRIPTION The MAS1175 is an integrated circuit well suited to build VCTCXO for mobile communication. Only two external components are needed. Temperature calibration is achieved with three calibration points only. The trimming is done through a serial bus and the calibration information is stored in an internal PROM. To build a VCTCXO only two additional components, a varactor and a crystal are needed. The compensation method is fully analog. IC compensation work is continuous without generating any steps or other interferences. FEATURES • • • • • Very small size Minimum current draw Wide operating temperature range Phase noise <-130 dBc/Hz at 1 kHz offset VCTCXO for mobile phones APPLICATIONS • VCTCXO for other telecommunications systems BLOCK DIAGRAM DA CLK PV VC CUB INF SENS LIN 4 4 f(T) MAS1175 TE1 4 Σ f(T) 8 T Vref TMux TE2 CDAC1 8 VDD CDAC2 2 OUT X2 X1 VSS 1 (9) DA1175.008 13 July, 2006 PIN DESCRIPTION Pin Description Power Supply Voltage Programming Input Serial Bus Clock Input Serial Bus Data Input Temperature Output Test Multiplexer Output Voltage Control Input Crystal Oscillator Output Crystal/Varactor Oscillator Input Power Supply Ground Buffer Output Symbol VDD PV CLK DA TE1 TE2 VC X1 X2 VSS OUT x-coordinate 263 503 745 1001 1246 1454 190 398 1355 1828 2031 y-coordinate 1330 1326 1321 1321 1325 1325 231 231 231 242 231 Note: Because the substrate of the die is internally connected to VDD, the die has to be connected to VDD or left floating. Make sure that VDD is the first pad to be bonded. Pick-and-place and all component assembly are recommended to be performed in ESD protected area. Note: Pad coordinates are measured from the left bottom corner of the chip to the center of the pads. The coordinates may vary depending on sawing width and location, however, distances between pads are accurate. ABSOLUTE MAXIMUM RATINGS Parameter Supply Voltage Input Voltage Power Dissipation Storage Temperature Note: Not valid for programming pin PV Symbol VDD - VSS VIN PMAX TST Min -0.3 VSS -0.3 -55 Max 6.0 VDD + 0.3 20 150 Unit V V mW o C Note 1) RECOMMENDED OPERATION CONDITIONS Parameter Supply Voltage Supply Current Operable Temperature Storage Temperature Crystal Pulling Sensitivity Load Capacitance Symbol VDD ICC TC TS S CL Conditions Vcc = 2.8 Volt Relative humidity = 15%…70% -30 -5 30 10 Min 2.7 Typ 2.8 Max 5.5 1.8 +85 +40 Unit V mA o C o C ppm/pF pF 2 (9) DA1175.008 13 July, 2006 ELECTRICAL CHARACTERISTICS Parameter Frequency Range Voltage Control Range Voltage Control Sensitivity Output Voltage (10kΩ // 10 pF) Compensation Range ± 2.5 ppm Compensation Range ± 2.0 ppm Compensation Range Linear Part Compensation Inflection Point Compensation Range Cubic Part Compensation CD.


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