K8D638UBM

www.DataSheet4U.com K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory Revision History Revision No. History 0.0 1.0 1.1 Initial Draft Final Specification Revised - Release the stand-by current from typ. 5uA(max. 18uA) to typ. 10uA(max. 30uA). Not support 48TSOP1 Package Not support 16M/16M BANK partition Support 48TSOP1 Package Support 48TSOP1 Lead Free Package Support 48FBGA Leaded/Lead Free Package Draft Date January 10, 2002 May 22, 2002 June 18, 2003 Remark Preliminary Final 1.2 November 18, 2003 1.3 1.4 1.5 July 22, 2004 September 16, 2004 March 16, 2005 1 Revision 1.5 March 2005 K8D6x16UTM / K8D6x16UBM 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory FEATURES Single Voltage, 2.7V to 3.6V for Read and Write operations Organization 8,388,608 x 8 bit (Byte mode) / 4,194,304 x 16 bit (Word mode) Fast Read Access Time : 70ns Read While Program/Erase Operation Dual Bank architectures Bank 1 / Bank 2 : 16Mb / 48Mb Secode(Security Code) Block : Extra 64K Byte block Power Consumption (typical value @5MHz) - Read Current : 14mA - Program/Erase Current : 15mA - Read While Program or Read While Erase Current : 25mA - Standby Mode/Auto Sleep Mode : 10µA WP/ACC input pin - Allows special protection of two outermost boot blocks at VIL, regardless of block protect status - Removes special protection of two outermost boot block at VIH, the two blocks return to normal block protect status - Program time at V...