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〈SMALL-SIGNAL TRANSISTOR〉
2SC5383
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE...
www.DataSheet4U.com
〈SMALL-SIGNAL
TRANSISTOR〉
2SC5383
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON
NPN EPITAXIAL TYPE(Ultra super mini type) DESCRIPTION
2SC5383 is a ultra super mini package resin sealed silicon
NPN epitaxial
transistor, It is designed for low frequency voltage application. . 0.4 1.6 0.8 0.4
OUTLINE DRAWING
Unit:mm
0.5
① ② ③
1.6 1.0
FEATURE
● Small collector to emitter saturation voltage. VCE(sat)=0.3V max(@Ic=100mA,IB=10mA) ●Excellent linearity of DC forward gain. ●Ultra super mini package for easy mounting
0.7
0.5
For Hybrid IC,small type machine low frequency voltage Amplify application.
JEITA:SC-75A JEDEC:-
MAXIMUM RATINGS(Ta=25℃)
Symbol VCBO VCEO VEBO I
O
TERMINAL CONNECTER
Ratings 50 50 6 200 150 +150 -55~+150 Unit V V V mA mW ℃ ℃
Parameter Collector to Base voltage Collector to Emitter voltage Emitter to Base voltage Collector current Collector dissipation Junction temperature Storage temperature
①:BASE ②:EMITTER ③:COLLECTOR
Pc Tj Tstg
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Parameter C to E break down voltage Collector cut off current Emitter cut off current DC forward current gain DC forward current gain C to E Saturation Vlotage Gain bandwidth product Collector output capacitance Noise figure Symbol V(BR)CEO ICBO IEBO hFE hFE VCE(sat) fT Cob NF I C=100μA ,R V V V V
BE
0~0.1
APPLICATION
0.55
0.15 Limits Min 50 ※ 150 90 Typ 200 2.5 Max 0.1 0.1 800 0.3 15 V MHz pF dB
Test conditions =∞
0.3
Unit V μA μA
CB=50V, I E=0mA EB
=6V, I C...