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IRFU014A
ADVANCED POWER MOSFET
Description
www.DataSheet4U.com $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.097Ω (Typ.) IRFR/U014A BVDSS = 60 V RDS(on) = 0.14Ω ID = 8.2 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate...
Fairchild Semiconductor
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