FQB16N25C

www.DataSheet4U.com FQB16N25C/FQI16N25C 250V N-Channel MOSFET June 2006 QFET FQB16N25C/FQI16N25C 250V N-Channel MOSFET Features 15.6A, 250V, RDS(on) = 0.27 Ω @VGS = 10 V Low gate charge ( typical 41nC) Low Crss ( typical 68pF) Fast switching 100% avalanche tested Improved dv/dt capability ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls. D D G S D2-PAK FQB Series I2-PAK G D S FQI Series G S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) Parameter FQB16N25C / FQI16N25C 250 15.6 9.8 62.4 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C)* Power Dissipation (TC = 25°C) - Derate above 25°C 410 15.6 13.9 5.5 3.13 139 1.11 -55 to +150 300 TJ, TSTG TL Operatin...