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TECHNICAL DATA
PNP SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/354 Devices 2N2604 2N26...
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TECHNICAL DATA
PNP SILICON LOW POWER
TRANSISTOR
Qualified per MIL-PRF-19500/354 Devices 2N2604 2N2605 Qualified Level JAN, JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation
Symbol
VCBO VCEO VEBO IC PT TJ, Tstg Symbol RθJC
2N2604
80
2N2605
70
Units
Vdc Vdc Vdc mAdc mW/0C 0 C Unit C/mW
@ TA = +250C(1)
Operating & Storage Junction Temperature Range
60 6.0 30 400 -65 to +200 Max. 0.437
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 2.28 mW/0C above TA = +250C
0
TO-46* (TO-206AB)
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage IC = 10 µAdc Collector-Emitter Breakdown Voltage IC = 10 mAdc Emitter-Base Breakdown Current IE = 10 µAdc Collector-Base Cutoff Current VCB = 50 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc Collector-Emitter Cutoff Current VCE = 50 Vdc 2N2604 2N2605 V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES 80 70 60 6.0 10 2.0 10 Vdc Vdc Vdc ηAdc ηAdc ηAdc
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2N2604, 2N2605 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio IC = 10 µAdc, VCE = 5.0 Vdc IC = 500 µAdc, ...