IRG4BC10SDPBF

www.DataSheet4U.com PD -94904 IRG4BC10SDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Standard Speed CoPack IGBT VCES = 600V Extremely low voltage drop 1.1Vtyp. @ 2A S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. Very Tight Vce(on) distribution IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-220AB package Lead-Free Generation 4 IGBTs offer highest efficiencies available IGBTs optimized for specific application conditions HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing Lower losses than MOSFET's conduction and Diode losses Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. G E VCE(on) typ. = 1.10V @VGE = 15V, IC = 2.0A n-channel Benefits TO-220AB Absolute Maximum Ratings Max. 600 14 8.0 18 18 4.0 18 ± 20 38 15 -55 to +15...