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IRF1503PBF Dataheets PDF



Part Number IRF1503PBF
Manufacturers International Rectifier
Logo International Rectifier
Description AUTOMOTIVE MOSFET
Datasheet IRF1503PBF DatasheetIRF1503PBF Datasheet (PDF)

www.DataSheet4U.com PD-95438 IRF1503PbF AUTOMOTIVE MOSFET Typical Applications O O O 14V Automotive Electrical Systems 14V Electronic Power Steering Lead-Free HEXFET® Power MOSFET D VDSS = 30V G S Features O O O O O Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the l.

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www.DataSheet4U.com PD-95438 IRF1503PbF AUTOMOTIVE MOSFET Typical Applications O O O 14V Automotive Electrical Systems 14V Electronic Power Steering Lead-Free HEXFET® Power MOSFET D VDSS = 30V G S Features O O O O O Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (tested) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon limited) Continuous Drain Current, VGS @ 10V (See Fig.9) Continuous Drain Current, VGS @ 10V (Package limited) Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Single Pulse Avalanche Energy Tested Value† Avalanche Current Repetitive Avalanche Energy… Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 240 170 75 960 330 2.2 ± 20 510 980 See Fig.12a, 12b, 15, 16 -55 to + 175 Units A W W/°C V mJ A mJ °C 300 (1.6mm from case ) Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.50 ––– Max. 0.45 ––– 62 Units °C/W www.irf.com 1 06/22/04 IRF1503PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance „ Min. 30 ––– ––– 2.0 75 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.028 2.6 ––– ––– ––– ––– ––– ––– 130 36 41 17 130 59 48 5.0 13 5730 2250 290 7580 2290 3420 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 3.3 mΩ VGS = 10V, ID = 140A ƒ 4.0 V VDS = 10V, ID = 250µA ––– S VDS = 25V, ID = 140A 20 VDS = 30V, VGS = 0V µA 250 VDS = 30V, VGS = 0V, TJ = 125°C 200 VGS = 20V nA -200 VGS = -20V 200 ID = 140A 54 nC VDS = 24V 62 VGS = 10V ––– VDD = 15V ––– ID = 140A ns ––– RG = 2.5Ω ––– VGS = 10V ƒ D Between lead, ––– 6mm (0.25in.) nH G from package ––– and center of die contact S ––– VGS = 0V ––– pF VDS = 25V ––– ƒ = 1.0MHz, See Fig. 5 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 24V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 24V Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes:  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). ‚ Starting TJ = 25°C, L = 0.049mH R G = 25Ω, IAS = 140A. (See Figure 12). ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 240 showing the A G integral reverse ––– ––– 960 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 140A, VGS = 0V ƒ ––– 71 110 ns TJ = 25°C, IF = 140A, VDD = 15V ––– 110 170 nC di/dt = 100A/µs ƒ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) „ Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. † This value determined from sample failure population. 100% tested to this value in production. … 2 www.irf.com IRF1503PbF 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 ID, Drain-to-Source Current (A) 100 ID, Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 4.5V 10 4.5V 20µs PULSE WIDTH Tj = 25°C 1 0.1 1 10 100 10 0.1 1 20µs PULSE WIDTH Tj = 175°C 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 200 T J = 25°C T .


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