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PD-95438
IRF1503PbF
AUTOMOTIVE MOSFET
Typical Applications
O O O
14V Automotive Electrical Systems 14V Electronic Power Steering Lead-Free
HEXFET® Power MOSFET
D
VDSS = 30V
G S
Features
O O O O O
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
RDS(on) = 3.3mΩ ID = 75A
Description
Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (tested) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon limited) Continuous Drain Current, VGS @ 10V (See Fig.9) Continuous Drain Current, VGS @ 10V (Package limited) Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
240 170 75 960 330 2.2 ± 20 510 980 See Fig.12a, 12b, 15, 16 -55 to + 175
Units
A
W W/°C V mJ A mJ °C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
––– 0.50 –––
Max.
0.45 ––– 62
Units
°C/W
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1
06/22/04
IRF1503PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff.
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. 30 ––– ––– 2.0 75 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. ––– 0.028 2.6 ––– ––– ––– ––– ––– ––– 130 36 41 17 130 59 48 5.0 13 5730 2250 290 7580 2290 3420
Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 3.3 mΩ VGS = 10V, ID = 140A 4.0 V VDS = 10V, ID = 250µA ––– S VDS = 25V, ID = 140A 20 VDS = 30V, VGS = 0V µA 250 VDS = 30V, VGS = 0V, TJ = 125°C 200 VGS = 20V nA -200 VGS = -20V 200 ID = 140A 54 nC VDS = 24V 62 VGS = 10V ––– VDD = 15V ––– ID = 140A ns ––– RG = 2.5Ω ––– VGS = 10V D Between lead, ––– 6mm (0.25in.) nH G from package ––– and center of die contact S ––– VGS = 0V ––– pF VDS = 25V ––– ƒ = 1.0MHz, See Fig. 5 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 24V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 24V
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Starting TJ = 25°C, L = 0.049mH R G = 25Ω, IAS = 140A. (See Figure 12). Pulse width ≤ 400µs; duty cycle ≤ 2%.
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol ––– ––– 240 showing the A G integral reverse ––– ––– 960 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 140A, VGS = 0V ––– 71 110 ns TJ = 25°C, IF = 140A, VDD = 15V ––– 110 170 nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS . Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population. 100% tested to this value in production.
2
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IRF1503PbF
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
4.5V
10
4.5V
20µs PULSE WIDTH Tj = 25°C
1 0.1 1 10 100 10 0.1 1
20µs PULSE WIDTH Tj = 175°C
10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
200
T J = 25°C T .