DatasheetsPDF.com

SST39WF800A Dataheets PDF



Part Number SST39WF800A
Manufacturers Silicon Storage Technology
Logo Silicon Storage Technology
Description 8Mbit Multi Purpose Flash
Datasheet SST39WF800A DatasheetSST39WF800A Datasheet (PDF)

www.DataSheet4U.com 8 Mbit (x16) Multi-Purpose Flash SST39WF800A SST39WF800A1.8V 8Mb (x16) MPF memory Preliminary Specifications FEATURES: • Organized as 512K x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption (typical values at 5 MHz) – Active Current: 5 mA (typical) – Standby Current: 1 µA (typical) • Sector-Erase Capability – Uniform 2 KWord sectors • Block-.

  SST39WF800A   SST39WF800A



Document
www.DataSheet4U.com 8 Mbit (x16) Multi-Purpose Flash SST39WF800A SST39WF800A1.8V 8Mb (x16) MPF memory Preliminary Specifications FEATURES: • Organized as 512K x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption (typical values at 5 MHz) – Active Current: 5 mA (typical) – Standby Current: 1 µA (typical) • Sector-Erase Capability – Uniform 2 KWord sectors • Block-Erase Capability – Uniform 32 KWord blocks • Fast Read Access Time – 90 ns • Latched Address and Data • Fast Erase and Word-Program – Sector-Erase Time: 36 ms (typical) – Block-Erase Time: 36 ms (typical) – Chip-Erase Time: 140 ms (typical) – Word-Program Time: 28 µs (typical) • Automatic Write Timing – Internal VPP Generation • End-of-Write Detection – Toggle Bit – Data# Polling • CMOS I/O Compatibility • JEDEC Standard – Flash EEPROM Pinouts and command sets • Packages Available – 48-ball TFBGA (6mm x 8mm) PRODUCT DESCRIPTION The SST39WF800A device is a 512K x16 CMOS MultiPurpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39WF800A writes (Program or Erase) with a 1.65-1.95V power supply. This device conforms to JEDEC standard pin assignments for x16 memories. Featuring high-performance Word-Program, the SST39WF800A device provides a typical Word-Program time of 28 µsec. The device uses Toggle Bit or Data# Polling to detect the completion of the Program or Erase operation. To protect against inadvertent writes, it has on-chip hardware and software data protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, this device is offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years. The SST39WF800A device is suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, it significantly improves performance and reliability, while lowering power consumption. It inherently uses less energy ©2004 Silicon Storage Technology, Inc. S71258-00-000 8/04 1 during Erase and Program than alternative flash technologies. When programming a flash device, the total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. These devices also improve flexibility while lowering the cost for program, data, and configuration storage applications. The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles. To meet surface mount requirements, the SST39WF800A is offered in a 48-ball TFBGA package. See Figure 1 for pin assignments. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MPF is a trademark of Silicon Storage Technology, Inc. These specifications are subject to change without notice. www.DataSheet4U.com 8 Mbit Multi-Purpose Flash SST39WF800A Preliminary Specifications Device Operation Commands are used to initiate the memory operation functions of the device. Commands are written to the device using standard microprocessor write sequences. A command is written by asserting WE# low while keeping CE# low. The address bus is latched on the falling edge of WE# or CE#, whichever occurs last. The data bus is latched on the rising edge of WE# or CE#, whichever occurs first. Sector/Block-Erase Operation The Sector- (or Block-) Erase operation allows the system to erase the device on a sector-by-sector (or block-byblock) basis. The SST39WF800A offers both Sector-Erase and Block-Erase mode. The sector architecture is based on uniform sector size of 2 KWord. The Block-Erase mode is based on uniform block size of 32 KWord. The SectorErase operation is initiated by executing a six-byte command sequence with Sector-Erase command (30H) and sector address (SA) in the last bus cycle. The Block-Erase operation is initiated by executing a six-byte command sequence with Block-Erase command (50H) and block address (BA) in the last bus cycle. The sector or block address is latched on the falling edge of the sixth WE# pulse, while the command (30H or 50H) is latched on the rising edge of the sixth WE# pulse. The internal Erase operation begins after the sixth WE# pulse. The End-ofErase operation can be d.


CAT1321 SST39WF800A SST39WF1602


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)