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HY5V66GF

Part Number	HY5V66GF
Manufacturer	Hynix Semiconductor
Description	4 Banks X 1M X 16Bit Synchronous DRAM
Published	Mar 6, 2007
Detailed Description	com HY5V66GF 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hyundai HY5V66GF is a 67,108,864-bit...
Datasheet	HY5V66GF PDF File

Overview

com HY5V66GF 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hyundai HY5V66GF is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.
HY5V66GF is organized as 4banks of 1,048,576x16.
HY5V66GF is offering fully synchronous operation referenced to a positive edge of the clock.
All inputs and outputs are synchronized with the rising edge of the clock input.
The data paths are internally pipelined to achieve very high bandwidth.
All input and output voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 2 or 3), the number of con...

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