2SJ612

www.DataSheet4U.com Ordering number : ENN7178A 2SJ612 P-Channel Silicon MOSFET 2SJ612 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions unit : mm 2062A [2SJ612] 4.5 1.6 1.5 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.5 3 1.5 2 3.0 1 1.0 0.4 2.5 4.25max 0.4 (Bottom view) 0.75 1 : Gate 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (250mm2!0.8mm) Tc=25°C Conditions Ratings --20 ± 10 --2.5 --10 1.0 3.5 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=-1mA, VGS=0 VDS=--20V, VGS=0 VGS=± 8V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=-1.3A ID=-1.3A, VGS=--4V ID=-0.7A, VGS=--2.5V Ratings min --20 --1 ± 10 --0.4 2.0 2.8 190 250 245 350 --1.3 typ max Unit V µA µA V S mΩ mΩ Marking : JS Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremel...