SUP40N10-35

www.DataSheet4U.com SUP40N10-35 New Product Vishay Siliconix N-Channel 105-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 105 FEATURES rDS(on) (W) ID (A) 37.5 36.0 0.035 @ VGS = 10 V 0.038 @ VGS = 6 V D TrenchFETr Power MOSFETS D 175_C Junction Temperature APPLICATIONS D Automotive − Motor Drives − 12-V Systems D Note Book PC adaptors TO-220AB D G G D S Top View Ordering Information: SUP40N10-35—E3 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya L = 0.1 mH TC = 25_C TA = 25_Cc TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 105 "20 37.5 21.5 75 35 61 107b 3.75 −55 to 175 Unit V A mJ W _C Maximum Power Dissipationa Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter PCB Mountc J Junction-to-Ambient ti t A bi t Junction-to-Case (Drain) Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1” square PCB (FR-4 material). Document Number: 72797 S-40445—Rev. A, 15-Mar-04 www.vishay.com Free Air RthJA RthJC Symbol Limit 40 62.5 1.4 Unit _C/W 1 SUP40N10-35 Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 m...