MGFS36E2527

www.DataSheet4U.com MITSUBISHI SEMICONDUCTOR Preliminary Specifications are subject to change without notice. MGFS36E2527 2.5-2.7GHz HBT HYBRID IC Outline Drawing 4.5 1.0 DESCRIPTION MGFS36E2527 is GaAs RF amplifier designed for WiMAX CPE. FEATURES InGaP HBT Device 6V Operation 27dBm Linear Output Power 33dB Linear Gain Integrated Output Power Detector Integrated 1-bit 19dB Step Attenuator 50ohms Matched Surface Mount Package RoHS Compliant Package 4.5 1 2 3 10 9 8 7 6 (X-ray Top View) APPLICATION IEEE802.16-2004, IEEE802.16e-2005 4 5 1 2 3 4 5 6 7 8 9 10 Pin Vc Vc Vc Vc Pout Po_det GND Vref Vcont DIM IN mm FUNCTIONAL BLOCK DIAGRAM Pin Vcont (0/3V) Vc Pout Bias Circuit Vref Po_det ELECTRICAL CHARACTERISTICS(Ta=25°C) Symbol Parameter Test Conditions* Min 2.5 Vc=6V, Vref=2.85V Pout=27dBm 64QAM OFDM Modulation Duty Cycle < 10% Vcont=3V Vc=6V, Vref=0V Limits Typ 33 10 2.5 -10 1.5 19 10 Unit Max 2.7 GHz dB % % dB V dB µA f Frequency Gp Gain Efficiency ηt EVM EVM Input Return Loss ρin Vdet Power Detector Voltage ATT Control Gain Step Ileak Leakage Current *NOTE : Ta=25°C, Zin=Zout=50Ω Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate mea...