STN817

www.DataSheet4U.com ® STF817 STN817 PNP MEDIUM POWER TRANSISTORS Type STF817 STN817 s Marking 817 N817 s SURFACE-MOUNTING DEVICES IN MEDIUM POWER SOT-223 AND SOT-89 PACKAGES AVAILABLE IN TAPE & REEL PACKING 2 APPLICATIONS s VOLTAGE REGULATION s RELAY DRIVER s GENERIC SWITCH DECRIPTION The STF817 and STN817 are PNP transistors manufactured using Planar Technology resulting in rugged high performance devices. 1 SOT-223 2 3 SOT-89 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Devices Packages V CBO V CEO V EBO IC I CM IB I BM P tot T stg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value STN817 SOT-223 -120 -80 -5 -1.5 -2 -0.3 -0.6 1.6 -65 to 150 150 1.4 STF817 SOT-89 V V V A A A A W o C o C Unit April 2002 1/5 STF817 - STN817 THERMAL DATA SOT-223 R thj-amb Thermal Resistance Junction-ambient 2 SOT-89 89 o Max 78 C/W Device mounted on a PCB area of 1 cm . ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I CEO I EBO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = -120 V V CE = -80 V V EB = -5 V I C = -10 mA -80 Min. Typ. Max. -500 -1 -100 Unit µA mA µA V V CEO(sus)...