Gallium Arsenide PHEMT RF Power Field Effect Transistor
Description
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Freescale Semiconductor Technical Data
Document Number: MRFG35002N6 Rev. 1, 5/2006
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications. Ty...
