M58BW32F

www.DataSheet4U.com M58BW16F M58BW32F 16 or 32 Mbit (x32, Boot Block, Burst) 3.3V supply Flash memories Preliminary Data Features ■ Supply voltage – VDD = 2.7V to 3.6V (45ns) or VDD = 2.5V to 3.3V (55ns) – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers High performance – Access times: 45 and 55ns – Synchronous Burst Reads – 75MHz Effective Zero Wait-State Burst Read – Asynchronous Page Reads M58BW32F memory organization: – Eight 64 Kbit small parameter blocks – Four 128 Kbit large parameter blocks – Sixty-two 512 Kbit main blocks M58BW16F memory organization: – Eight 64 Kbit parameter blocks – Thirty-one 512 Kbit main blocks Hardware block protection – WP pin to protect any block combination from Program and Erase operations – PEN signal for Program/Erase Enable Irreversible Modify protection (OTP like) on 128 Kbits: – Block 1 (bottom device) or Block 72 (top device) in the M58BW32F – Blocks 2 & 3 (bottom device) or Blocks 36 & 35 (top device) in the M58BW16F Security – 64-bit Unique Device Identifier (UID) Fast programming – Write to Buffer and Program capability Optimized for FDI drivers – Common Flash Interface (CFI) – Fast Program/Erase Suspend feature in each block ■ ■ ■ PQFP80 (T) ■ BGA LBGA80 (ZA) 10 x 8 ball array ■ ■ Low power consumption – 100µA typical Standby current Electronic signature – Manufacturer Code: 0020h – Top Device Codes: M58BW32FT: 8838h M58BW16FT: 883Ah – Bottom Device Codes: M58BW32FB: 8837h M58BW16FB: 8839h Automotive Device Grade 3: – Tem...