C4783

www.DataSheet4U.com DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR 2SC4783 NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC4783 is NPN silicon epitaxial transistor. PACKAGE DRAWING (Unit: mm) 0.3 ± 0.05 0.1 +0.1 –0.05 FEATURES 1.6 ± 0.1 0.8 ± 0.1 High DC current gain: hFE2 = 200 TYP. High voltage: VCEO = 50 V 3 0 to 0.1 2 0.2 +0.1 –0 0.5 0.5 1.0 1.6 ± 0.1 0.6 0.75 ± 0.05 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) Note1 Note2 VCBO VCEO VEBO IC(DC) IC(pulse) PT Tj Tstg 60 50 5.0 100 200 200 150 –55 to + 150 V V V mA mA mW °C °C Total Power Dissipation (TA = 25°C) Junction Temperature Storage Temperature Range 1: Emitter 2: Base 3: Collector Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2 2. When mounted on ceramic substrate of 3.0 cm x 0.64 mm ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Collector Cut-off Current Emitter Cut-off Current DC Current Gain Note SYMBOL ICBO IEBO hFE1 hFE2 TEST CONDITIONS VCB = 60 V, IE = 0 VEB = 5.0 V, IC = 0 VCE = 6.0 V, IC = 0.1 mA VCE = 6.0 V, IC = 1.0 mA VCE = 6.0 V, IC = 1.0 mA IC = 100 mA, IB = 10 mA IC = 100 mA, IB = 10 mA VCE = 6.0 V, IE = −10 mA VCE = 6.0 V, IE = 0, f = 1.0 MHz MIN. TYP. MAX. 100 100 UNIT nA nA − 50 90 200 0.62 0.15 0.86 150 250 3.0 4.0 0.3 1.0 600 − V V V MHz pF Base to Emitter Voltage Note Note VBE VCE(sat) VBE(sat) fT Cob Collector Saturation Voltage Base Saturatio...