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STW22NM60 Dataheets PDF



Part Number STW22NM60
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-CHANNEL Power MOSFET
Datasheet STW22NM60 DatasheetSTW22NM60 Datasheet (PDF)

www.DataSheet4U.com STP22NM60 - STF22NM60 STB22NM60 - STB22NM60-1 - STW22NM60 N-CHANNEL 600V - 0.19 Ω - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh™Power MOSFET ADVANCED DATA TYPE STP22NM60 STF22NM60 STB22NM60 STB22NM60-1 STW22NM60 s s s s s VDSS 600 600 600 600 600 V V V V V RDS(on) < 0.25 Ω < 0.25 Ω < 0.25 Ω < 0.25 Ω < 0.25 Ω Rds(on)*Qg 7.6 7.6 7.6 7.6 7.6 Ω*nC Ω*nC Ω*nC Ω*nC Ω*nC ID 22 22 22 22 22 A A A A A 3 1 2 1 3 2 TO-220 3 2 1 TO-220FP TYPICAL RDS(on) = 0.19Ω HIGH dv/dt AND AVALANC.

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www.DataSheet4U.com STP22NM60 - STF22NM60 STB22NM60 - STB22NM60-1 - STW22NM60 N-CHANNEL 600V - 0.19 Ω - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh™Power MOSFET ADVANCED DATA TYPE STP22NM60 STF22NM60 STB22NM60 STB22NM60-1 STW22NM60 s s s s s VDSS 600 600 600 600 600 V V V V V RDS(on) < 0.25 Ω < 0.25 Ω < 0.25 Ω < 0.25 Ω < 0.25 Ω Rds(on)*Qg 7.6 7.6 7.6 7.6 7.6 Ω*nC Ω*nC Ω*nC Ω*nC Ω*nC ID 22 22 22 22 22 A A A A A 3 1 2 1 3 2 TO-220 3 2 1 TO-220FP TYPICAL RDS(on) = 0.19Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TO-247 3 12 3 1 I2PAK D2PAK DESCRIPTION This improved version of MDmesh™ which is based on Multiple Drain process represents the new benchmark in high voltage MOSFETs. The resulting product exhibits even lower on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall performances that are significantly better than that of similar competition’s products. APPLICATIONS The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. INTERNAL SCHEMATIC DIAGRAM ORDERING INFORMATION SALES TYPE STP22NM60 STF22NM60 STB22NM60 STB22NM60-1 STW22NM60 MARKING P22NM60 F22NM60 B22NM60T4 B22NM60-1 W22NM60 PACKAGE TO-220 TO-220FP D²PAK I²PAK TO-247 PACKAGING TUBE TUBE TAPE & REEL TUBE TUBE June 2003 1/11 STP22NM60 / STF22NM60 / STB22NM60 / STB22NM60-1 - STW22NM60 ABSOLUTE MAXIMUM RATINGS Symbol Parameter STP22NM60 STB22NM60/1 VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt(1) VISO Tstg Tj Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature -22 12.6 80 192 1.2 Value STF22NM60 600 600 ±30 22 (*) 12.6 (*) 80(*) 45 0.36 15 2500 –65 to 150 150 -22 12.6 80 210 1.2 STW22NM60 V V V A A A W W/°C V/ns V °C °C Unit ( ) Pulse width limited by safe operating area; (1) ISD ≤22A, di/dt ≤ 400A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX. (*)Limited only by maximum temperature allowed THERMAL DATA TO-220/D2PAK/I2PAK/TO-247 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 0.65 62.5 300 TO-220FP 2.8 °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 11 650 Unit A mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ±30 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 11 A 3 4 0.19 Min. 600 1 10 ±100 5 0.25 Typ. Max. Unit V µA µA nA V Ω 2/11 STP22NM60 / STF22NM60 / STB22NM60 / STB22NM60-1 - STW22NM60 ELECTRICAL CHARACTERISTICS (CONTINUE) DYNAMIC Symbol gfs (1) Ciss Coss Crss Coss eq. (2) Rg Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Gate Input Resistance Test Conditions VDS > ID(on) x RDS(on)max, ID = 11 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. TBD 1590 803 52 130 1.6 Max. Unit S pF pF pF pF Ω VGS = 0V, VDS = 0V to 400V f=1 MHz Gate DC Bias=0 Test Signal Level=20mV Open Drain (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (*) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 200 V, ID = 11 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) VDD = 400 V, ID = 22 A, VGS = 10 V Min. Typ. 25 20 40 11 25 71 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 480 V, ID = 22 A, RG = 4.7Ω, VGS = 10 V (see test circuit, Figure 5) Min. Typ. 13 15 26 Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr Irrm trr Qrr Irrm Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 22 A, VGS = 0 ISD = 22 A, di/dt = 100 A/µs, VDD = 100 V, Tj = 25°C (see test circuit, Figure 5) ISD = 22 A, di/dt .


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