ZXTP2029F

www.DataSheet4U.com ZXTP2029F 100V, SOT23, PNP medium power transistor Summary V(BR)CEV > -130V, V(BR)CEO > -100V IC(cont) = -3A RCE(sat) = 45m⍀ typical VCE(sat) < -80mV @ -1A PD = 1.2W Complementary part number: ZXTN2020F Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features Higher power dissipation SOT23 package High peak current Low saturation voltage 130V forward blocking voltage Applications MOSFET and IGBT gate driving Motor drive DC-DC converters High side switches Pinout - top view Ordering information Device ZXTP2029FTA Reel size (inches) 7 Tape width 8mm Quantity per reel 3,000 Device marking 953 Issue 2 - September 2005 © Zetex Semiconductors plc 2005 1 www.zetex.com ZXTP2029F Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current(a) Base current Power dissipation @ TA=25oC(a) Linear derating factor Power dissipation @ TA=25oC(b) Linear derating factor Power dissipation @ TA=25oC(c) Linear derating factor Operating and storage temperature Symbol VCBO V(BR)CEV VCEO VEBO ICM IC IB PD PD PD Tj:Tstg Limit -130 -130 -100 -7.0 -5 -3 -1 1.0 8.0 1.2 9.6 1.56 12.5 -55 to +150 Unit V V V V A A A W mW/oC W mW/...