ZXTP2013G

www.DataSheet4U.com ZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES 5 amps continuous current Up to 10 amps peak current Very low saturation voltages SOT223 APPLICATIONS Motor driving Line switching High side switches Subscriber line interface cards (SLIC) ORDERING INFORMATION DEVICE ZXTP2013GTA ZXTP2013GTC REEL SIZE 7” 13” TAPE WIDTH 12mm embossed QUANTITY PER REEL 1,000 units 4,000 units PINOUT DEVICE MARKING ZXTP 2013 TOP VIEW ISSUE 1 - JUNE 2005 1 SEMICONDUCTORS ZXTP2013G ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current (a) Peak pulse current Power dissipation at T A =25°C (a) Linear derating factor Power dissipation at T A =25°C (b) Linear derating factor Operating and storage temperature range SYMBOL BV CBO BV CEO BV EBO IC I CM PD PD T j , T stg LIMIT -140 -100 -7 -5 -10 3.0 24 1.6 12.8 -55 to +150 UNIT V V V A A W mW/°C W mW/°C °C THERMAL RESISTANCE PARAMETER Junction to ambient (a) SYMBOL R ⍜ JA VALUE 42 UNIT °C/W NOTES (a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a devi...