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ZXTP2012A
60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE
SUMMARY BVCEO = -60V : RSAT = 3...
www.DataSheet4U.com
ZXTP2012A
60V
PNP LOW SATURATION MEDIUM POWER
TRANSISTOR IN E-LINE
SUMMARY BVCEO = -60V : RSAT = 38m ; IC = -3.5A DESCRIPTION
Packaged in the E-line outline this new low saturation 60V
PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.
FEATURES
3.5 amps continuous current Up to 15 amps peak current Very low saturation voltages Excellent gain up to 10 amps
E-line
APPLICATIONS
DC - DC converters MOSFET gate drivers Power switches Motor control
ORDERING INFORMATION
DEVICE ZXTP2012ASTOA ZXTP2012ASTZ QUANTITY PER REEL 2,000 units / reel 2,000 units / carton
PINOUT
DEVICE MARKING
ZXT P20 12
TOP VIEW
ISSUE 2 - NOVEMBER 2005 1
SEMICONDUCTORS
ZXTP2012A
ABSOLUTE MAXIMUM RATINGS
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current (a) Peak pulse current Practical power dissipation at T A =25°C (a) Linear derating factor Power dissipation at T A =25°C (b) Linear derating factor Operating and storage temperature range SYMBOL BV CBO BV CEO BV EBO IC I CM PD PD T j , T stg LIMIT -100 -60 -7 -3.5 -15 1.0 8 0.71 5.7 -55 to 150 UNIT V V V A A W mW/°C W mW/°C °C
THERMAL RESISTANCE
PARAMETER Junction to ambient (a) Junction to ambient (b) SYMBOL R ⍜ JA R ⍜ JA VALUE 125 175 UNIT °C/W °C/W
NOTES (a) For a device through hole mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz...