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ZXTP2008Z
30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
SUMMARY BVCEO = -30V : RSAT = 24...
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ZXTP2008Z
30V
PNP LOW SATURATION MEDIUM POWER
TRANSISTOR IN SOT89
SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A
DESCRIPTION
Packaged in the SOT89 outline this new low saturation 30V
PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power management functions.
FEATURES
5.5 amps continuous current Up to 20 amps peak current Very low saturation voltages Exceptional gain linearity down to 10mA Excellent high current gain hold up
SOT89
APPLICATIONS
DC - DC converters MOSFET gate drivers Charging circuits Power switches Motor control
PINOUT
ORDERING INFORMATION
DEVICE REEL SIZE 7" TAPE WIDTH 12mm embossed QUANTITY PER REEL 1000 units
ZXTP2008ZTA
DEVICE MARKING
949
TOP VIEW
ISSUE 1 - JUNE 2005 1
ZXTP2008Z
ABSOLUTE MAXIMUM RATINGS
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Power dissipation at T A =25°C (a) Linear derating factor Power dissipation at T A =25°C (b) Linear derating factor Operating and storage temperature range T j , T stg PD
(a)
SYMBOL BV CBO BV CEO BV EBO IC I CM PD
LIMIT -50 -30 -7 -5.5 -20 1.5 12 2.1 16.8 -55 to 150
UNIT V V V A A W mW/°C W mW/°C °C
THERMAL RESISTANCE
PARAMETER Junction to Ambient (a) Junction to Ambient
(b)
SYMBOL R ⍜ JA R ⍜ JA
VALUE 83 60
UNIT °C/W °C/W
NOTES (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with hi...