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ZXTP2008Z

Zetex Semiconductors

PNP LOW SATURATION MEDUIM POWER TRANSISTOR

www.DataSheet4U.com ZXTP2008Z 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24...


Zetex Semiconductors

ZXTP2008Z

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www.DataSheet4U.com ZXTP2008Z 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power management functions. FEATURES 5.5 amps continuous current Up to 20 amps peak current Very low saturation voltages Exceptional gain linearity down to 10mA Excellent high current gain hold up SOT89 APPLICATIONS DC - DC converters MOSFET gate drivers Charging circuits Power switches Motor control PINOUT ORDERING INFORMATION DEVICE REEL SIZE 7" TAPE WIDTH 12mm embossed QUANTITY PER REEL 1000 units ZXTP2008ZTA DEVICE MARKING 949 TOP VIEW ISSUE 1 - JUNE 2005 1 ZXTP2008Z ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Power dissipation at T A =25°C (a) Linear derating factor Power dissipation at T A =25°C (b) Linear derating factor Operating and storage temperature range T j , T stg PD (a) SYMBOL BV CBO BV CEO BV EBO IC I CM PD LIMIT -50 -30 -7 -5.5 -20 1.5 12 2.1 16.8 -55 to 150 UNIT V V V A A W mW/°C W mW/°C °C THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R ⍜ JA R ⍜ JA VALUE 83 60 UNIT °C/W °C/W NOTES (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with hi...




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