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ZXTP2006E6 Dataheets PDF



Part Number ZXTP2006E6
Manufacturers Zetex Semiconductors
Logo Zetex Semiconductors
Description PNP LOW SAT MEDIUM POWER TRANSISTOR
Datasheet ZXTP2006E6 DatasheetZXTP2006E6 Datasheet (PDF)

www.DataSheet4U.com ZXTP2006E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 SUMMARY BVCEO = -20V : RSAT = 31m ; IC = -3.5A DESCRIPTION Packaged in the SOT23-6 outline this new low saturation 20V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES • 3.5 Amps continuous current • Extremely low saturation voltage (-70mV max @ 1A/100mA ) • Up to 10 Amps peak current • Very low saturation v.

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www.DataSheet4U.com ZXTP2006E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 SUMMARY BVCEO = -20V : RSAT = 31m ; IC = -3.5A DESCRIPTION Packaged in the SOT23-6 outline this new low saturation 20V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES • 3.5 Amps continuous current • Extremely low saturation voltage (-70mV max @ 1A/100mA ) • Up to 10 Amps peak current • Very low saturation voltages SOT23-6 APPLICATIONS • DC - DC converters • Battery charging • Power switches • Motor control • Power management functions ORDERING INFORMATION DEVICE REEL SIZE 7” 13” TAPE WIDTH 8mm embossed 8mm embossed QUANTITY PER REEL 3,000 10,000 PINOUT ZXTP2006E6TA ZXTP2006E6TC DEVICE MARKING 52 TOP VIEW ISSUE 1 - JUNE 2005 1 ZXTP2006E6 ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Power dissipation at T A =25°C (a) Linear derating factor Power dissipation at T A =25°C (b) Linear derating factor SYMBOL BV CBO BV CEO BV EBO IC I CM PD LIMIT UNIT V V V A A W mW/°C W mW/°C -25 -20 -7.5 -3.5 -10 1.1 8.8 PD 1.7 13.6 THERMAL RESISTANCE PARAMETER Junction to ambient (a) SYMBOL R ⍜ JA R ⍜ JC VALUE 113 73 UNIT °C/W °C/W Junction to ambient (b) NOTES (a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) As above measured at t<5 seconds. ISSUE 1 - JUNE 2005 2 ZXTP2006E6 CHARACTERISTICS ISSUE 1 - JUNE 2005 3 ZXTP2006E6 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage SYMBOL BV CBO BV CEO BV EBO I CBO I CES I EBO V CE(SAT) -10 -100 -110 Base-emitter saturation voltage Base-emitter turn-on voltage Static forward current transfer ratio V BE(SAT) V BE(ON) h FE 300 300 150 10 Transition frequency fT C OBO -0.96 -0.8 575 450 285 40 110 900 MIN. -25 -20 -7.5 TYP. -49 -43 -8.4 -100 -100 -100 -15 -140 -130 -1.1 -0.9 MAX. UNIT CONDITIONS V V V nA nA nA mV mV mV V V I C = -100 ␮ A I C = -10mA * I E = -100 ␮ A V CB = -20V V CB = -20V V EB = -6V I C = -0.1A, I B = -10mA* I C = -1A, I B = -10mA* IC = -3.5A, IB = -350mA* IC = -3.5A, IB = -350mA* I C = -3.5A, V CE = -2V * I C = -10mA, V CE = -2V * I C = -1A, V CE = -2V * I C = -3.5A, V CE = -2V * I C = -10A, V CE = -2V * I C = -50mA, V CE = -10V f = 50MHz Output capacitance 45 pF V CB = -10V, f = 1MHz * NOTES * Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ2%. ISSUE 1 - JUNE 2005 4 ZXTP2006E6 TYPICAL CHARACTERISTICS ISSUE 1 - JUNE 2005 5 ZXTP2006E6 NOTES: ISSUE 1 - JUNE 2005 6 ZXTP2006E6 NOTES: ISSUE 1 - JUNE 2005 7 ZXTP2006E6 PACKAGE OUTLINE PAD LAYOUT DETAILS Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters DIM Min A A1 A2 b C D 0.90 0.00 0.90 0.20 0.09 2.70 Max 1.45 0.15 1.30 0.50 0.26 3.10 Min 0.035 0.00 0.035 0.008 0.003 0.106 Max 0.057 0.006 0.051 0.020 0.010 0.122 E E1 L e e1 ⍜ Inches DIM Min 2.20 1.30 0.10 Max 3.20 1.80 0.60 Min 0.0866 0.0511 0.004 Max 0.118 0.071 0.024 Millimeters Inches 0.95 REF 1.90 REF 0° 30° 0.037 REF 0.075 REF 0° 30° © Zetex Semiconductors plc 2005 Europe Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - JUNE 2005 8 SCXXXX####DS# .


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