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PD - 94083A
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
IRG4BC15UD-S I...
www.DataSheet4U.com
PD - 94083A
INSULATED GATE BIPOLAR
TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
IRG4BC15UD-S IRG4BC15UD-L
UltraFast CoPack IGBT
VCES = 600V
Features
UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching IGBT Co-packaged with ultra-soft-recovery antiparallel diode Industry standard D2Pak & TO-262 packages
G E
VCE(on) typ. = 2.02V
@VGE = 15V, IC = 7.8A
Benefits
Best Value for Appliance and Industrial Applications High noise immune "Positive Only" gate driveNegative bias gate drive not necessary For Low EMI designs- requires little or no snubbing Single Package switch for bridge circuit applications Compatible with high voltage Gate Driver IC's Allows simpler gate drive
n-ch an nel
D2Pak IRG4BC15UD-S
TO-262 IRG4BC15UD-L
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector CurrentQ Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Max.
600 14 7.8 42 42 4.0 16 ± 20 49 19 -55 to +150 300 (0.063 in. (1.6mm) from case)
Units
V
A
V W °C
Thermal Resistance
Parameter
RθJC RθJC RθCS RθJA RθJA Wt Junction-to-Case - IG...