MRF577T1

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF577T1/D The RF Small Signal Line NPN Silicon High-Frequency Transistor Designed for low noise, wide dynamic range front end amplifiers at frequencies to 1.5 GHz. Specifically aimed at portable communication devices such as pagers and hand–held phones. Low Noise Figure NF = 1.5 dB (Typ) @ 1.0 GHz High Current Gain–Bandwidth Product (fτ = 7.0 GHz Typ @ 6.0 V, 40 mA) Small, Surface–Mount Package (SC–70/SOT–323) Available in Tape and Reel Packaging. T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel. MRF577T1 LOW NOISE HIGH FREQUENCY TRANSISTOR CASE 419–02, STYLE 3 (SC–70/SOT–323) MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 75°C (1) Derate above 75°C Storage Temperature Range Operating Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg TJ Value 10 20 3.0 80 232 3.1 – 55 to +150 150 Unit Vdc Vdc Vdc mAdc mW mW/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction–to–Case (1) Symbol RθJC Value 323 Unit °C/W DEVICE MARKING MRF577T1 = D (1) Case temperature measured on the collector lead immediately adjacent to body of package. MOTOROLA RF DEVICE DATA © Motorola, Inc. 1997 MRF577T1 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0 mA) Collector–Base...