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32CTQ030SPBF Dataheets PDF



Part Number 32CTQ030SPBF
Manufacturers International Rectifier
Logo International Rectifier
Description SCHOTTKY RECTIFIER
Datasheet 32CTQ030SPBF Datasheet32CTQ030SPBF Datasheet (PDF)

www.DataSheet4U.com Bulletin PD-21034 rev. A 07/06 32CTQ030SPbF 32CTQ030-1PbF SCHOTTKY RECTIFIER 32 Amp IF(AV) = 30Amp VR = 30V Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform VRRM IFSM @ tp = 5 μs sine VF TJ @ 15 Apk, TJ = 125°C range 30 900 0.40 - 55 to 150 V A V °C Description/ Features Units A The 32CTQ030.. Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operatio.

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www.DataSheet4U.com Bulletin PD-21034 rev. A 07/06 32CTQ030SPbF 32CTQ030-1PbF SCHOTTKY RECTIFIER 32 Amp IF(AV) = 30Amp VR = 30V Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform VRRM IFSM @ tp = 5 μs sine VF TJ @ 15 Apk, TJ = 125°C range 30 900 0.40 - 55 to 150 V A V °C Description/ Features Units A The 32CTQ030.. Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Lead-Free ("PbF" suffix) 150° C TJ operation Values 30 Case Styles 32CTQ030SPbF 32CTQ030-1PbF Base Common Cathode 2 Base Common Cathode 2 1 Anode 2 Common Cathode 3 1 Anode Anode 2 Common Cathode 3 Anode D2PAK www.irf.com TO-262 1 32CTQ030SPbF, 32CTQ030-1PbF Bulletin PD-21034 rev. A 07/06 Voltage Ratings Part number VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V) 32CTQ030SPbF, 32CTQ030-1PbF 30 Absolute Maximum Ratings Parameters IF(AV) Max. Average Forward Current * See Fig. 5 IFSM EAS IAR Max. Peak One Cycle Non-Repetitive Surge Current * See Fig. 7 Non-Repetitive Avalanche Energy Repetitive Avalanche Current 32CTQ Units Conditions 30 900 250 13 3 A 50% duty cycle @ TC = 115° C, rectangular wave form 5μs Sine or 3μs Rect. pulse 10ms Sine or 6ms Rect. pulse Following any rated load condition and with rated VRRM applied A mJ A TJ = 25 °C, IAS = 1.20 Amps, L = 11.10 mH Current decaying linearly to zero in 1 μsec Frequency limited by TJ max. VA = 1.5 x VR typical Electrical Specifications Parameters VFM Max. Forward Voltage Drop * See Fig. 1 (1) 32CTQ Units Conditions 0.49 0.58 0.40 0.53 V V V V mA mA V mΩ pF nH V/ μs VR = 5VDC (test signal range 100Khz to 1Mhz) 25 °C Measured lead to lead 5mm from package body (Rated VR ) (1) Pulse Width < 300μs, Duty Cycle < 2% @ 15A @ 30A @ 15A @ 30A TJ = 25 °C TJ = 125 °C TJ = TJ max. TJ = 25 °C TJ = 125 °C VR = rated VR IRM Max. Reverse Leakage Current (1) * See Fig. 2 1.75 97 0.233 9.09 1300 8.0 10000 VF(TO) Threshold Voltage rt CT LS Forward Slope Resistance Max. Junction Capacitance Per Leg Typical Series Inductance Per Leg dv/dt Max. Voltage Rate of Change Thermal-Mechanical Specifications Parameters TJ Tstg Max. Junction Temperature Range Max. Storage Temperature Range 32CTQ Units Conditions - 55 to 150 - 55 to 150 3.25 0.50 2 (0.07) Min. Max. 6 (5) 12 (10) °C °C °C/W °C/W g (oz.) Kg-cm (Ibf-in) Case style D2Pak Case style TO-262 DC operation * See Fig. 4 RthJC Max. Thermal Resistance Junction to Case Per Leg RthCS Typical Thermal Resistance, Case to Heatsink wt T Approximate Weight Mounting Torque Marking Device Mounting surface , smooth and greased 32CTQ030S 32CTQ030-1 2 www.irf.com 32CTQ030SPbF, 32CTQ030-1PbF Bulletin PD-21034 rev. A 07/06 1000 1000 100 10 1 0.1 0.01 0.001 TJ = 150°C 125°C 100°C 75°C 50°C 25°C Ins tantaneous Forward Current - I F (A) 100 Reverse Current - I R (mA) 0 5 10 15 20 25 30 Reverse Voltage - VR (V) Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage 10000 Junction Capacitance - C T (pF) 10 TJ= 150°C TJ= 125°C TJ= 25°C TJ = 25°C 1000 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 100 0 5 10 15 20 25 30 35 Reverse Voltage - VR (V) Forward Voltage Drop - V FM (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics 10 T hermal Impedanc e Z thJC (°C/W) D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage 1 P DM 0.1 t1 0.01 S ingle Pulse (T hermal Resistanc e) Notes: t2 1. Duty factor D = t 1 / t 2 2. Peak T J= P DM x Z thJC+ TC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t 1 , Rec tangular Pulse Dura tion (S ec onds) Fig. 4 - Maximum Thermal Impedance Z thJC Characteristics www.irf.com 3 32CTQ030SPbF, 32CTQ030-1PbF Bulletin PD-21034 rev. A 07/06 160 Allowable Case T emperature - (°C) Average Power Loss - (Watts) 10 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 RMSLimit DC 150 140 130 120 110 100 90 see note (2) S q uare wa ve (D = 0.50) 80% Rated V R a pplied 8 DC 6 4 2 80 0 5 10 15 20 25 Average Forward Current - I F(AV) (A) 0 0 5 10 15 20 25 Average Forward Current - I F(AV) (A) Fig. 5 - Maximum Allowable Case Temperature Vs. Average Forward Current Non-Repetitive S urge Current - I FS M (A) 1000 Fig. 6 - Forward Power Loss Characteristics At Any R ated Load Condition And With Rated VRRM Applied F ollowing S urge 100 10 100 1000 10000 S quare Wave Pulse Duration - t p (microsec) Fig. 7 - Maximum Non-Repetitive Surge Current L HIGH-S PEED S WIT CH F REE-WHEEL DIODE 40HF L 40S 02 + DUT IR F P460 R g = 25 ohm .


32CTQ030-1PBF 32CTQ030SPBF A8290


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