2SC5761

www.DataSheet4U.com DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES Ideal for low noise ⋅ high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz SiGe technology (fT = 60 GHz, fmax = 60 GHz) Flat-lead 4-pin thin-type super minimold (M04) package ORDERING INFORMATION Part Number 2SC5761 2SC5761-T2 Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form 8 mm wide embossed taping Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature 2 Symbol VCBO VCEO VEBO IC Ptot Note Ratings 8.0 2.3 1.2 35 80 150 −65 to +150 Unit V V V mA mW °C °C Tj Tstg Note Mounted on 1.08 cm × 1.0 mm (t) glass epoxy substrate THERMAL RESISTANCE Parameter Junction to Case Resistance Symbol Rth (j-c) Value 150 Unit °C/W Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm ...