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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA2452
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCH...
www.DataSheet4U.com
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
µ PA2452
N-CHANNEL MOS FIELD EFFECT
TRANSISTOR FOR SWITCHING
PACKAGE DRAWING (Unit: mm)
1
0.5±0.1 0.5±0.1
DESCRIPTION
The µ PA2452 is a switching device which can be driven directly by a 2.5 V power source. This µ PA2452 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
6
1.85±0.1 0.145±0.05
2 3
5 4
0.25 +0.1 -0.05
4.4±0.1
FEATURES
2.5 V drive available Low on-state resistance RDS(on)1 = 17.5 mΩ TYP. (VGS = 4.5 V, ID = 4.0 A) RDS(on)2 = 18.5 mΩ TYP. (VGS = 4.0 V, ID = 4.0 A) RDS(on)3 = 21.0 mΩ TYP. (VGS = 3.1 V, ID = 4.0 A) RDS(on)4 = 25.0 mΩ TYP. (VGS = 2.5 V, ID = 4.0 A) Built-in G-S protection diode against ESD
5.0±0.1
7
0.05 +0 -0.05
(0.9)
ORDERING INFORMATION
PART NUMBER PACKAGE 6PIN HWSON (4521)
(0.15) (3.05) Each lead has same dimensions 5,6: Source 2 1,2: Source 1 4: Gate 2 3: Gate 1 7: Drain (0.50)
µ PA2452TL
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC)
Note1 Note2 Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
24.0 ±12.0 ±7.8 ±80.0 2.5 0.7 150 −55 to +150
V V A A W W °C °C
Gate1
EQUIVALENT CIRCUIT
Drain1 Drain2
Drain Current (pulse)
Total Power Dissipation (2 units) Channel Temperature Storage Temperature
Body Diode
(1.45)
0.8 MAX.
2.0±0.1
Gate2 Gate Protection Diode Source2
Body ...