UPA2450

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2450 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING (Unit: mm) 1 6 DESCRIPTION The µ PA2450 is a switching device which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 0.5±0.1 1.85±0.1 0.145±0.05 (0.50) 2 3 5 4 0.1 0.25 + −0.05 FEATURES 2.5 V drive avaliable Low on-state resistance RDS(on)1 = 17.5 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(on)2 = 18.5 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A) RDS(on)3 = 22.0 mΩ MAX. (VGS = 3.1 V, ID = 4.0 A) RDS(on)4 = 27.5 mΩ MAX. (VGS = 2.5 V, ID = 4.0 A) Built-in G-S protection diode against ESD 4.4±0.1 5.0±0.1 7 0 0.05 + −0.05 (0.9) ORDERING INFORMATION (1.45) PART NUMBER PACKAGE 6PIN HWSON (4521) (0.15) (3.05) µ PA2450TL ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25°C) Drain Current (pulse) Note1 Note2 Note3 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 20 ±12 ±8.6 ±80 2.5 0.7 150 –55 to +150 V V A A W W °C °C Gate1 1,2: Source 1 3: Gate 1 7: Drain 5,6: Source 2 4: Gate 2 EQUIVALENT CIRCUIT Drain1 Drain2 Total Power Dissipation (2 unit) Total Power Dissipation (2 unit) Channel Temperature Storage Temperature Body Diode 0.8 MAX. Gate2 Gate Protection Diode Source2 Body Diode No...