SEP8506

www.DataSheet4U.com SEP8506 GaAs Infrared Emitting Diode FEATURES Side-emitting plastic package 50¡ (nominal) beam angle 935 nm wavelength Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger INFRA-20.TIF DESCRIPTION The SEP8506 is a gallium arsenide infrared emitting diode molded in a side-emitting red plastic package. The chip is positioned to emit radiation through a plastic lens from the side of the package. OUTLINE DIMENSIONS in inches (mm) Tolerance 3 plc decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51) DIM_071.ds4 40 h Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SEP8506 GaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current Power Dissipation Storage Temperature Range Operating Temperature Range Soldering Temperature (5 sec) 50 mA 100 mW [À] -40¡C to 85¡C -40¡C to 85¡C 240¡C SCHEMATIC Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.78 mW/¡C. Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 41 SEP8506 GaAs Infrared Emitting Diode Fig. 1 Radiant Intensity vs Angular Displacement 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -60 -45 -30 -15 0 +15 +30 +45 +60 Fig. 2 gra_...