GFP60N03

www.DataSheet4U.com GFP60N03 N-Channel Enhancement-Mode MOSFET TO-220AB 0.415 (10.54) Max. 0.154 (3.91) Dia. 0.142 (3.60) 0.113 (2.87) 0.102 (2.56) D H C N ct E ET u R d T ENF ro P New G ® 0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14) VDS 30V RDS(ON) 11mΩ ID 60A D G * 0.155 (3.93) 0.134 (3.40) 0.603 (15.32) 0.573 (14.55) 0.635 (16.13) 0.580 (14.73) 0.360 (9.14) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.104 (2.64) 0.094 (2.39) S Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Specially Designed for Low Voltage DC/DC Converters Fast Switching for High Efficiency 0.410 (10.41) 0.350 (8.89) G PIN D S 0.160 (4.06) 0.09 (2.28) 0.560 (14.22) 0.530 (13.46) Mechanical Data 0.037 (0.94) 0.026 (0.66) 0.105 (2.67) 0.095 (2.41) 0.205 (5.20) 0.190 (4.83) 0.022 (0.56) 0.014 (0.36) Dimensions in inches and (millimeters) * May be notched or flat Case: JEDEC TO-220AB molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Torque: 10 in-lbs maximum Weight: 2.0g Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation TC = 25°C TC = 100°C Symbol VDS VGS ID IDM PD TJ, Tstg TL RθJC RθJA C = 25°C unless otherwise noted) Limit 30 Unit V ± 20 60 100 62.5 25 –55 to 150 275 2.0 62.5 A W °C °C °C/W °C/W 5/1...