Document
www.DataSheet4U.com
Composite Transistors
XN09D58
Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD)
For DC-DC converter ■ Features
• Two elements incorporated into one package (Tr + SBD) • Reduction of the mounting area and assembly cost by one half • Low collector-emitter saturation voltage VCE(sat)
0.50+0.10 –0.05 0.30+0.10 –0.05 6 5 4
1.50+0.25 –0.05 2.8+0.2 –0.3
Unit: mm
0.16+0.10 –0.06
1
2
3
(0.65)
■ Basic Part Number
• XN9D57 + MA3ZD12
(0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Display at No.1 lead 10°
■ Absolute Maximum Ratings Ta = 25°C
Parameter Tr Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current SBD Reverse voltage Repetitive peak reverse voltage Forward current (Average) Non-repetitive peak forward surge current Overall Total power dissipation * Junction temperature Storage temperature PT Tj Tstg 600 125 −55 to +125 mW °C °C Symbol VCBO VCEO VEBO IC ICP VR VRRM IF(AV) IFSM Rating −15 −15 −5 −2.5 −10 20 25 700 2 Unit V V V A A V V mA A
1.1+0.2 –0.1
1: Emitter 2: Base 3: Anode
0 to 0.1
4: Collector (Cathode) 5: Collector (Cathode) 6: Collector (Cathode) Mini6-G1 Package
Marking Symbol: EF Internal Connection
6 5 4
1
2
Note) *: Measuring on ceramic substrate at 15 mm × 15 mm × 0.6 mm
■ Electrical Characteristics Ta = 25°C ± 3°C
• Tr
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio * Collector-emitter saturation voltage * Symbol VCBO VCEO VEBO ICBO hFE1 hFE2 VCE(sat) Conditions IC = −10 µA, IE = 0 IC = −1 mA, IB = 0 IE = −10 µA, IC = 0 VCB = −10 V, IE = 0 VCE = −2 V, IC = −100 mA VCE = −2 V, IC = −2.5 A IC = −1 A, IB = −10 mA IC = −2.5 A, IB = −50 mA 200 100 −140 −270 −320 Min −15 −15 −5 − 0.1 560 Typ Max Unit V V V µA mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Pulse measurement
Publication date: March 2004 SJJ00246CED
1.1+0.3 –0.1
3
0.4±0.2
5°
1
XN09D58
■ Electrical Characteristics (continued) Ta = 25°C ± 3°C
• Tr (continued)
Parameter Collector output capacitance (Common base, input open circuited) Transition frequency Turn-on time Storage time Turn-off time Symbol Cob fT ton tstg toff Conditions VCB = −10 V, IE = 0, f = 1 MHz VCB = − 10 V, IE = 50 mA, f = 200 MHz Refer to the switching time measurement circuit Min Typ 40 180 35 110 10 Max Unit pF MHz ns ns ns
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Switching time measurement circuit IB2 IB1 RB 470 µF VCC = −5 V Output RL
Input
PW = 20 µs DC ≤ 1%
−20IB1 = 20IB2 = IC = −1.5 A
• SBD
Parameter Forward voltage Reverse current Terminal capacitance Reverse recovery time Symbol VF IR Ct trr IF = 700 mA VR = 20 V VR = 0, f = 1 MHz IF = IR =.