APM9430

www.DataSheet4U.com APM9430 N-Channel Enhancement Mode MOSFET Features 20V/4A, RDS(ON) = 40mΩ(typ.) @ VGS = 4.5V RDS(ON) = 110mΩ(typ.) @ VGS = 2.5V Super High Density Cell Design Reliable and Rugged SO-8 Package Pin Description S S S G 1 2 3 4 8 7 6 5 D D D D Applications Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems G SO − 8 D D D D S S S Ordering and Marking Information APM 9430 H a n d lin g C o d e Tem p. R ange P ackage C ode N-Channel MOSFET P ackage C ode K : S O -8 O p e ra tio n J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 ° C H a n d lin g C o d e TU : Tube TR : Tape & Reel APM 9430 APM 9430 XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol VDSS VGSS ID IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating 20 ±16 TA = 25°C 4 15 Unit V A Maximum Drain Current – Continuous Maximum Drain Current – Pulsed ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 1 www.anpec.com.tw APM9430 Absolute Maximum Ratings Symbol PD TJ TSTG RθJA Parameter Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance - Junction to Ambient TA = 25°C TA = 100 °C (TA = 25°C unless otherwise noted) Rating 2....