EMB19

www.DataSheet4U.com EMB19 Transistors General purpose (dual digital transistors) EMB19 zFeatures 1) Two DTA115E chips in a EMT package. 2) Same size as EMT package, so same mounting machine can be used for both. 3) Transistor elements are independent, eliminating interference. zExternal dimensions (Unit : mm) EMB19 0.22 (4) (5) (6) (3) (2) (1) 1.2 1.6 zStructure Epitaxial planar type PNP silicon transistor (Built-in resistor type) The following characteristics apply to both DTr1 and DTr2. 0.13 Each lead has same dimensions ROHM : EMT6 Abbreviated symbol : B19 zEquivalent circuit EMB19 (3) (2) (1) R1 R2 DTr1 DTr2 R1=100kΩ R2=100kΩ R2 R1 (4) (5) (6) zAbsolute maximum ratings (Ta=25°C) Parameter Supply voltage Input voltage Symbol VCC VIN IO IC (Max.) Pd Tj Tstg Limits −50 −40 10 −30 −20 150 (TOTAL) 150 −55 to +150 mA mW ∗ ˚C ˚C Unit V V Output current Power dissipation Junction temperature Storage temperature ∗ 120mW per element must not be exceeded. 0.5 0.5 0.5 1.0 1.6 1/2 EMB19 Transistors zElectrical characteristics (Ta=25°C) Parameter Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT Min. − −3 − − − 82 70 0.8 − Typ. − − −0.1 − − − 100 1 250 Max. −0.5 − −0.3 −0.15 −0.5 − 130 1.2 − Unit V V mA µA − kΩ − MHz Conditions VCC= −5V, IO= −100µA VO= −0.3V, IO= −1mA IO= −5mA, II= −0.25mA VI= −5V VCC= −50V, VI=0V IO= −5mA, VO= −5V − − VCE= −10V, IE=5mA, f=1...