Document
N-Channel 75-V (D-S) MOSFET
Si7148DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
75 0.011 at VGS = 10 V 0.0145 at VGS = 4.5 V
PowerPAK SO-8
ID (A)a 28 28
Qg (Typ.) 33 nC
6.15 mm
D 8D
7 D
6 D
5
S 1S
5.15 mm
2 S
3G
4
Bottom View
Ordering Information: Si7148DP-T1-E3 (Lead (Pb)-free) Si7148DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES • Halogen-free According to IEC 61249-2-21
Available • TrenchFET® Power MOSFET • 100 % Rg Tested APPLICATIONS • Primary Side Switch
D
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS VGS
75 ± 20
V
TC = 25 °C
28
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
22 28b, c
Pulsed Drain Current
TA = 70 °C
IDM
12b, c 60
A
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IS
28 4.3b, c
Avalanche Current Single-Pulse Avalanche Energy
L = 0.1 mH
IAS EAS
45 100
mJ
TC = 25 °C
96
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
PD
61 5.4b, c
W
TA = 70 °C
3.4b, c
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
- 55 to 150 260
°C
Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73314 S09-0273-Rev. B, 16-Feb-09
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Si7148DP
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta, b Maximum Junction-to-Case (Drain)
t ≤ 10 s Steady State
Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 65 °C/W.
Symbol RthJA RthJC
Typical 18 1.0
Maximum 23 1.3
Unit °C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient VGS(th) Temperature Coefficient
ΔVDS/TJ ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA VDS = VGS, ID = 5 mA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 75 V, VGS = 0 V VDS = 75 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 15 A VGS = 4.5 V, ID = 13.5 A
Forward Transconductancea
gfs VDS = 15 V, ID = 15 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 35 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 38 V, VGS = 10 V, ID = 15 A
Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Qgs Qgd Rg td(on)
tr td(off)
tf td(on)
tr td(off)
tf
VDS = 38 V, VGS = 4.5 V, ID = 15 A f = 1 MHz
VDD = 38 V, RL = 3.8 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 38 V, RL = 3.8 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
Min. 75 1.5
30
Typ.
Max.
Unit
75 -6 2.0 2.3
0.0091 0.012
60
2.5
± 100 1 10
0.011 0.0145
V mV/°C
V nA µA A Ω S
2900 370 196 68 100 33 50 9.5 16.8 0.5 1.1 1.7 33 50 255 390 35 55 100 150 17 26 46 70 39 60 18 30
pF nC Ω
ns
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Document Number: 73314 S09-0273-Rev. B, 16-Feb-09
Si7148DP
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD IS = 4.3 A
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge Reverse Recovery Fall Time
Qrr ta
IF = 12 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.
Min.
Typ.
0.76 41 67 27 14
Max.
25 60 1.1 65 105
Unit
A
V ns nC ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Document Number: 73314 S09-0273-Rev. B, 16-Feb-09
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Si7148DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60 VGS = 10 V thru 4 V
50
60 50
I D - Drain Current (A)
I D - Drain Current (A)
40 40
30.