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SI7148DP Dataheets PDF



Part Number SI7148DP
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description N-Channel 75-V (D-S) MOSFET
Datasheet SI7148DP DatasheetSI7148DP Datasheet (PDF)

N-Channel 75-V (D-S) MOSFET Si7148DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 75 0.011 at VGS = 10 V 0.0145 at VGS = 4.5 V PowerPAK SO-8 ID (A)a 28 28 Qg (Typ.) 33 nC 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3G 4 Bottom View Ordering Information: Si7148DP-T1-E3 (Lead (Pb)-free) Si7148DP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg Tested APPLICATIONS • Primary Side Switch D G.

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N-Channel 75-V (D-S) MOSFET Si7148DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 75 0.011 at VGS = 10 V 0.0145 at VGS = 4.5 V PowerPAK SO-8 ID (A)a 28 28 Qg (Typ.) 33 nC 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3G 4 Bottom View Ordering Information: Si7148DP-T1-E3 (Lead (Pb)-free) Si7148DP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg Tested APPLICATIONS • Primary Side Switch D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS VGS 75 ± 20 V TC = 25 °C 28 Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 22 28b, c Pulsed Drain Current TA = 70 °C IDM 12b, c 60 A Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS 28 4.3b, c Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS 45 100 mJ TC = 25 °C 96 Maximum Power Dissipation TC = 70 °C TA = 25 °C PD 61 5.4b, c W TA = 70 °C 3.4b, c Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg - 55 to 150 260 °C Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73314 S09-0273-Rev. B, 16-Feb-09 www.vishay.com 1 Si7148DP Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, b Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 65 °C/W. Symbol RthJA RthJC Typical 18 1.0 Maximum 23 1.3 Unit °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVDS/TJ ΔVGS(th)/TJ ID = 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA VDS = VGS, ID = 5 mA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS VDS = 75 V, VGS = 0 V VDS = 75 V, VGS = 0 V, TJ = 55 °C On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 15 A VGS = 4.5 V, ID = 13.5 A Forward Transconductancea gfs VDS = 15 V, ID = 15 A Dynamicb Input Capacitance Ciss Output Capacitance Coss VDS = 35 V, VGS = 0 V, f = 1 MHz Reverse Transfer Capacitance Crss Total Gate Charge Qg VDS = 38 V, VGS = 10 V, ID = 15 A Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDS = 38 V, VGS = 4.5 V, ID = 15 A f = 1 MHz VDD = 38 V, RL = 3.8 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω VDD = 38 V, RL = 3.8 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω Min. 75 1.5 30 Typ. Max. Unit 75 -6 2.0 2.3 0.0091 0.012 60 2.5 ± 100 1 10 0.011 0.0145 V mV/°C V nA µA A Ω S 2900 370 196 68 100 33 50 9.5 16.8 0.5 1.1 1.7 33 50 255 390 35 55 100 150 17 26 46 70 39 60 18 30 pF nC Ω ns www.vishay.com 2 Document Number: 73314 S09-0273-Rev. B, 16-Feb-09 Si7148DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C Pulse Diode Forward Currenta ISM Body Diode Voltage VSD IS = 4.3 A Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Qrr ta IF = 12 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Rise Time tb Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Min. Typ. 0.76 41 67 27 14 Max. 25 60 1.1 65 105 Unit A V ns nC ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 73314 S09-0273-Rev. B, 16-Feb-09 www.vishay.com 3 Si7148DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 VGS = 10 V thru 4 V 50 60 50 I D - Drain Current (A) I D - Drain Current (A) 40 40 30.


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