RN152G

www.DataSheet4U.com RN152G Diodes PIN diode (Silicon Epitaxial Planer) RN152G z Applications High frequency switching z External dimensions (Unit : mm) 0.6±0.05 0.13±0.03 z Land size figure (Unit : mm) 0.5 1.0±0.05 1.4±0.05 z Features 1) Ultra small mold type. (VMD2) 2) High frequency resistance which is small and low capacity. 0.5 VMD2 z Construction Silicon epitaxial planar z Structure 0.27±0.03 0.5±0.05 ROHM : VMD2 dot (year week factory) z Taping dimensions (Unit : mm) 4±0.1 2±0.05 φ1.5+0.1 　　　　　0 1.75±0.1 0.18±0.05 3.5±0.05 1.11±0.05 2.1±0.1 φ0.5 0.76±0.1 4±0.1 2±0.05 0.4 8.0±0.3 0.1 1.2 0.3 0.65±0.05 z Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage VR Forward current IF Junction temperature Tj Storage temperature Tstg Operation temperature Topor z Electrical characteristic (Ta=25°C) Parameter Symbol Forward voltage VF Reverse current IR Limits 30 100 150 -55 to +150 -55 to +150 Unit V mA ℃ ℃ ℃ Min. 0.15 - Typ. - Max. 1 0.1 0.45 4.8 1.8 Unit V µA pF Ω Ω Conditions IF=10mA VR=30V VR=1V , f=1MHz IF=1mA,f=100MHz IF=10mA,f=100MHz Capacitance between terminals Forward frequency resistance Ct Rf Rev.B 1/2 RN152G Diodes z Electrical characteristic curves 100 Ta=150℃ 10000 Ta=150℃ 1000 Ta=125℃ 10 f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(nA) Ta=125℃ 10 100 Ta=75℃ 10 1 0.1 0.01 0.001 Ta=-25℃ Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 30 Ta=75℃ Ta=25℃ 1 1 Ta=-25℃ 0.1 0.1 0 100 200 300 400 500 600 700 800 900...