QST3

www.DataSheet4U.com QST3 Transistors General purpose amplification (−30V, −5A) QST3 zApplication Low frequency amplifier Driver zExternal dimensions (Unit : mm) 2.8 1.6 (1) (4) (5) (6) zFeatures 1) Collector current is large. 2) Collector saturation voltage is low. −250mV VCE(sat) At IC = −2A / IB = −40mA 0.4 0.16 (3) (2) ROHM : TSMT6 Each lead has same dimensions Abbreviated symbol : T03 zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation zEquivalent circuit Unit V V V A A ∗1 mW ∗2 W ∗3 °C °C 6pin 5pin 4pin Symbol VCBO VCEO VEBO IC ICP PC Junction temperature Tj Range of storage temperature Tstg ∗1 Single pulse, Pw=1ms ∗2 Each Terminal Mounted on a Recommended ∗3 Mounted on a 25mm×25mm× t 0.8mm Ceramic substrate Limits −30 −30 −6 −5 −8 500 1.25 150 −55 to +150 1pin 2pin 3pin zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Corrector output capacitance ∗Pulsed Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −30 −30 −6 − − − 270 − − Typ. − − − − − −170 − 200 60 Max. − − − −100 −100 −250 680 − − Unit V V V nA nA mV − MHz pF Conditions IC= −10µA IC= −1mA IE= −10µA VCB= −30V VEB= −6V IC= −2A, IB= −40mA VCE= −2V, IC= −500mA ∗ VCE...