HiPerFETTM MOSFET ISOPLUS220
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ADVANCE TECHNICAL INFORMATION
HiPerFETTM MOSFET
ISOPLUS220TM
Electrically Isolated Back Surface
N-...
Description
www.DataSheet4U.com
ADVANCE TECHNICAL INFORMATION
HiPerFETTM MOSFET
ISOPLUS220TM
Electrically Isolated Back Surface
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
IXFC 80N10
VDSS ID25 RDS(on) trr
= 100 V = 80 A = 12.5 mΩ ≤ 200 ns
Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC VISOL Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C Lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 100 100 ± 20 ± 30 80 55 320 80 50 2.5 5 230 -55 ... +150 150 -55 ... +150 V V V V A A A A mJ J V/ns W °C °C °C °C
ISOPLUS 220TM
G D S G = Gate, S = Source * Patent pending Isolated back surface* D = Drain,
Features
l
l l l l
1.6 mm (0.062 in.) from case for 10 s Mounting force 50/60 Hz, RMS, leads-to-tab
300
11..65/2.4..11 Nm/lb 2500 2 V~ g
l
Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<35pF) Low RDS (on) Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsicRectifier
Applications
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Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 100 2.0 4.0 ± 100 TJ = 25°C TJ = 125°C V V
l l l
VDSS VGS(th) IGSS IDSS RDS(on)
V GS = 0 V, ID = 250 µA V DS = VGS, ID = 4 mA VGS = ±...
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