CMT10N10

www.DataSheet4U.com CMT10N10 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION This advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. ! ! FEATURES ! ! Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature PIN CONFIGURATION TO-220 SYMBOL D Front View G ATE SO URCE DRAIN G S 1 2 3 N-Channel MOSFET ORDERING INFORMATION Part Number CMT10N10N220 Package TO-220 ABSOLUTE MAXIMUM RATINGS Rating Drain to Current － Continuous － Pulsed Gate-to-Source Voltage － Continue － Non-repetitive Total Power Dissipation Derate above 25℃ Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy － TJ = 25℃ (VDD = 100V, VGS = 10V, IL = 10A, L = 1.38mH, RG = 25Ω) Thermal Resistance － Junction to Case － Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds θJC θJA TL 3.13 100 260 ℃ ℃/W TJ, TSTG EAS Symbol ID IDM VGS ...