Document
www.DataSheet4U.com
PD - 97037
PDP SWITCH
Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications l Low QG for Fast Response l High Repetitive Peak Current Capability for Reliable Operation l Short Fall & Rise Times for Fast Switching l175°C Operating Junction Temperature for Improved Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability
IRFS4227PbF
Key Parameters
200 240 22 130 175
D
D
VDS max VDS (Avalanche) typ. RDS(ON) typ. @ 10V IRP max @ TC= 100°C TJ max
V V m: A °C
G
G
D
S
S
D2Pak
D S
G
Description This HEXFET® Power MOSFET is specifically designed for Sustain, Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Gate
Drain
Source
Absolute Maximum Ratings
Parameter
VGS ID @ TC = 25°C ID @ TC = 100°C IDM IRP @ TC = 100°C PD @TC = 25°C PD @TC = 100°C TJ TSTG Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Repetitive Peak Current g Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw 300 10lbxin (1.1Nxm) N
Max.
±30 62 44 260 130 330 190 2.2 -40 to + 175
Units
V A
W W/°C °C
Thermal Resistance
Parameter
RθJC RθJA Junction-to-Case f Junction-to-Ambient (PCB Mounted) fh Typ. ––– ––– Max. 0.45* 40 Units
* RθJC (end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes through are on page 8
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1
9/27/05
IRFS4227PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgd tst EPULSE Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Drain Charge Shoot Through Blocking Time Energy per Pulse
Min.
200 ––– ––– 3.0 ––– ––– ––– ––– ––– 49 ––– ––– 100 ––– –––
Typ. Max. Units
––– 170 22 ––– -13 ––– ––– ––– ––– ––– 70 23 ––– 570 910 4600 460 91 360 4.5 7.5 ––– ––– 26 5.0 ––– 20 1.0 100 -100 ––– 98 ––– ––– ––– ––– ––– ––– ––– ––– ––– nH ––– pF ns µJ S nC V mΩ V mV/°C µA .