Fast recovery diode
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RF051VA2S
Diodes
Fast recovery diode
RF051VA2S
zApplications High speed switching zFeatures 1) Sma...
Description
www.DataSheet4U.com
RF051VA2S
Diodes
Fast recovery diode
RF051VA2S
zApplications High speed switching zFeatures 1) Small mold type (TUMD2) 2) Ultra high switching speed 3) High reliability. zDimensions (Unit : mm)
0.17±0.1 0.05 1.3±0.05
zLand size figure (Unit : mm)
1.1
1.9±0.1
2.5±0.2
zConstructure Silicon epitaxial planar
0.8±0.05
TUMD2
zConstructure
ROHM : TUMD2 0.1 dot (year week factory) + day
0.6±0.2
zTaping dimensions (Unit : mm)
4.0±0.1 2.0±0.05 1.75±0.1 φ1.55±0.1 0 0.25±0.05
3.5±0.05
8.0±0.2
1.43±0.05
4.0±0.1
φ1.0±0.2 0
2.75
2.8±0.05
0.9±0.08
zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) Junction temperature Storage temperature zElectrical characteristic (Ta=25°C)
Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR trr
Symbol VRM VR Io IFSM Tj Tstg
Limits 200 200 0.5 5 150 -55 to +150
Unit V V A A ℃ ℃
Min. -
Typ. -
Max. 0.98 10 25
Unit V µA ns
Conditions IF=0.5A VR=200V IF=0.5A,IR=1A,Irr=0.25*IR
0.8 0.5
2.0
1/3
RF051VA2S
Diodes
zElectrical characteristic curves
1000 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) 100 10 1 0.1 0.01 Ta=25℃ Ta=125℃ Ta=150℃ Ta=75℃ Ta=-25℃ 1000000 100000 10000 1000 100 10 1 0 200 400 600 800 1000 0 50 100 150 200 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS Ta=-25℃ Ta=75℃ Ta=25℃ Ta=125℃ 100 f=1MHz CAPACITA...
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