FDB2710 — N-Channel PowerTrench® MOSFET
November 2013
FDB2710
N-Channel PowerTrench® MOSFET
250 V, 50 A, 42.5 mΩ
Features
RDS(on) = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A
High Performance Trench Technology for Extremely Low RDS(on)
Low Gate Charge High Power and Current Handing Capability
General Description
This N-Channel MOSFET is produced usin...
